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DTC123EET1G

DTC123EET1G onsemi

dtc123e-d.pdf Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 100MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
auf Bestellung 105000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.1 EUR
6000+ 0.089 EUR
15000+ 0.075 EUR
30000+ 0.071 EUR
75000+ 0.067 EUR
Mindestbestellmenge: 3000
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Technische Details DTC123EET1G onsemi

Description: TRANS PREBIAS NPN 50V 100MA SC75, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V, Supplier Device Package: SC-75, SOT-416, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms.

Weitere Produktangebote DTC123EET1G nach Preis ab 0.07 EUR bis 0.59 EUR

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DTC123EET1G DTC123EET1G Hersteller : onsemi dtc123e-d.pdf Description: TRANS PREBIAS NPN 50V 100MA SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
auf Bestellung 107970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
31+0.58 EUR
37+ 0.48 EUR
100+ 0.25 EUR
500+ 0.17 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 31
DTC123EET1G DTC123EET1G Hersteller : onsemi DTC123E_D-2310857.pdf Digital Transistors 100mA 50V BRT NPN
auf Bestellung 8199 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.59 EUR
10+ 0.4 EUR
100+ 0.17 EUR
1000+ 0.11 EUR
3000+ 0.088 EUR
9000+ 0.076 EUR
24000+ 0.07 EUR
Mindestbestellmenge: 5
DTC123EET1G Hersteller : ONSEMI RE_DSHEET_DTC123EET1G-ROC.pdf?t.download=true&u=h6ohhb Description: ONSEMI - DTC123EET1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 112788 Stücke:
Lieferzeit 14-21 Tag (e)
DTC123EET1G DTC123EET1G Hersteller : ON Semiconductor dtc123e-d.pdf Trans Digital BJT NPN 50V 100mA 300mW 3-Pin SOT-416 T/R
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DTC123EET1G DTC123EET1G Hersteller : ON Semiconductor dtc123e-d.pdf Trans Digital BJT NPN 50V 100mA 300mW 3-Pin SOT-416 T/R
Produkt ist nicht verfügbar