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DTC115GU3HZGT106

DTC115GU3HZGT106 Rohm Semiconductor


Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Emitter Base (R2): 100 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.097 EUR
Mindestbestellmenge: 3000
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Technische Details DTC115GU3HZGT106 Rohm Semiconductor

Description: TRANS PREBIAS NPN 50V 0.1A UMT3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V, Supplier Device Package: UMT3, Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 250 MHz, Resistor - Emitter Base (R2): 100 kOhms, Qualification: AEC-Q101.

Weitere Produktangebote DTC115GU3HZGT106 nach Preis ab 0.065 EUR bis 0.61 EUR

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Preis ohne MwSt
DTC115GU3HZGT106 DTC115GU3HZGT106 Hersteller : Rohm Semiconductor Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Emitter Base (R2): 100 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
30+0.6 EUR
43+ 0.41 EUR
100+ 0.2 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 30
DTC115GU3HZGT106 DTC115GU3HZGT106 Hersteller : ROHM Semiconductor ROHM_S_A0007910659_1-2562385.pdf Digital Transistors Automotive NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor) - DTC115GU3HZG is an digital transistor (Resistor built-in type transistor). Built-in bias resistors enable the configuration of an inverter circuit withou
auf Bestellung 2999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.61 EUR
10+ 0.42 EUR
100+ 0.17 EUR
1000+ 0.12 EUR
3000+ 0.088 EUR
9000+ 0.074 EUR
24000+ 0.07 EUR
Mindestbestellmenge: 5
DTC115GU3HZGT106 Hersteller : Rohm Semiconductor Trans Digital BJT NPN 50V 100mA 200mW Automotive AEC-Q101 3-Pin UMT T/R
auf Bestellung 2980 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2208+0.069 EUR
2500+ 0.065 EUR
Mindestbestellmenge: 2208