DTC114WU3HZGT106 Rohm Semiconductor
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1486+ | 0.1 EUR |
| 1629+ | 0.091 EUR |
| 1902+ | 0.075 EUR |
| 2005+ | 0.068 EUR |
| 3000+ | 0.065 EUR |
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Technische Details DTC114WU3HZGT106 Rohm Semiconductor
Description: NPN, SOT-323, R1R2 LEAK, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V, Supplier Device Package: UMT3, Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms, Qualification: AEC-Q101.
Weitere Produktangebote DTC114WU3HZGT106 nach Preis ab 0.063 EUR bis 0.56 EUR
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DTC114WU3HZGT106 | Hersteller : Rohm Semiconductor |
 Trans Digital BJT NPN 50V 100mA 200mW Automotive 3-Pin UMT T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC114WU3HZGT106 | Hersteller : Rohm Semiconductor |
Description: NPN, SOT-323, R1R2 LEAK Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V Supplier Device Package: UMT3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC114WU3HZGT106 | Hersteller : Rohm Semiconductor |
Trans Digital BJT NPN 50V 100mA 200mW Automotive 3-Pin UMT T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC114WU3HZGT106 | Hersteller : ROHM Semiconductor |
Digital Transistors NPN, SOT-323, R1?R2 Leak Absorption Type Digital Transistor (Bias Resistor Built-in Transistor) for automotive : DTC114WU3HZG is an digital transistor (Resistor built-in type transistor), suitable for inverter and interface, driver. Th |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC114WU3HZGT106 | Hersteller : Rohm Semiconductor |
Description: NPN, SOT-323, R1R2 LEAK Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V Supplier Device Package: UMT3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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