DTB543EETL Rohm Semiconductor
auf Bestellung 2890 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1755+ | 0.087 EUR |
| 1902+ | 0.078 EUR |
| 2000+ | 0.073 EUR |
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Technische Details DTB543EETL Rohm Semiconductor
Description: TRANS PREBIAS PNP 12V 0.5A EMT3, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V, Supplier Device Package: EMT3, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 12 V, Power - Max: 150 mW, Frequency - Transition: 260 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms.
Weitere Produktangebote DTB543EETL nach Preis ab 0.13 EUR bis 0.74 EUR
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DTB543EETL | Hersteller : Rohm Semiconductor |
 Trans Digital BJT PNP 12V 500mA 3-Pin EMT T/R |
auf Bestellung 2154 Stücke: Lieferzeit 14-21 Tag (e) |
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DTB543EETL | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS PNP 12V 0.5A EMT3 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V Supplier Device Package: EMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms |
auf Bestellung 2022 Stücke: Lieferzeit 10-14 Tag (e) |
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DTB543EETL | Hersteller : ROHM Semiconductor |
Digital Transistors TRANSISTOR |
auf Bestellung 3608 Stücke: Lieferzeit 10-14 Tag (e) |
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DTB543EETL | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS PNP 12V 0.5A EMT3 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V Supplier Device Package: EMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms |
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