DTA123JEBTL Rohm Semiconductor
auf Bestellung 8900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3969+ | 0.038 EUR |
3985+ | 0.037 EUR |
4386+ | 0.032 EUR |
6000+ | 0.03 EUR |
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Technische Details DTA123JEBTL Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3F, Packaging: Tape & Reel (TR), Package / Case: SC-89, SOT-490, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Supplier Device Package: EMT3F (SOT-416FL), Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms.
Weitere Produktangebote DTA123JEBTL nach Preis ab 0.062 EUR bis 0.066 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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DTA123JEBTL | Hersteller : Rohm Semiconductor | Trans Digital BJT PNP 50V 100mA 3-Pin EMTF T/R |
auf Bestellung 4080 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA123JEBTL | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A EMT3F Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: EMT3F (SOT-416FL) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
Produkt ist nicht verfügbar |
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DTA123JEBTL | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A EMT3F Packaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: EMT3F (SOT-416FL) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
Produkt ist nicht verfügbar |
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DTA123JEBTL | Hersteller : ROHM Semiconductor | Digital Transistors TRANSISTOR |
Produkt ist nicht verfügbar |