DTA123EETL Rohm Semiconductor
auf Bestellung 7800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4425+ | 0.035 EUR |
| 4567+ | 0.033 EUR |
| 4609+ | 0.031 EUR |
| 6000+ | 0.03 EUR |
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Technische Details DTA123EETL Rohm Semiconductor
Description: TRANS PREBIAS PNP 150MW EMT3, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V, Supplier Device Package: EMT3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms.
Weitere Produktangebote DTA123EETL nach Preis ab 0.083 EUR bis 0.69 EUR
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DTA123EETL | Hersteller : Rohm Semiconductor |
 Description: TRANS PREBIAS PNP 150MW EMT3Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Supplier Device Package: EMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA123EETL | Hersteller : Rohm Semiconductor |
Trans Digital BJT PNP 50V 100mA 150mW 3-Pin EMT T/R |
auf Bestellung 1968 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA123EETL | Hersteller : Rohm Semiconductor |
Trans Digital BJT PNP 50V 100mA 150mW 3-Pin EMT T/R |
auf Bestellung 5990 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA123EETL | Hersteller : ROHM Semiconductor |
Bipolar Transistors - Pre-Biased PNP 50V 100MA |
auf Bestellung 421 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA123EETL | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS PNP 150MW EMT3 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Supplier Device Package: EMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
auf Bestellung 6039 Stücke: Lieferzeit 10-14 Tag (e) |
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| DTA123EETL | Hersteller : ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC75A,SOT416 Mounting: SMD Case: SC75A; SOT416 Kind of package: reel; tape Power dissipation: 0.2W Frequency: 250MHz Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Base resistor: 2.2kΩ Collector-emitter voltage: 50V Base-emitter resistor: 2.2kΩ Collector current: 0.1A Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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| DTA123EETL | Hersteller : ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC75A,SOT416 Mounting: SMD Case: SC75A; SOT416 Kind of package: reel; tape Power dissipation: 0.2W Frequency: 250MHz Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Base resistor: 2.2kΩ Collector-emitter voltage: 50V Base-emitter resistor: 2.2kΩ Collector current: 0.1A |
Produkt ist nicht verfügbar |