![DSS4160FDBQ-7 DSS4160FDBQ-7](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/2367/31; U-DFN2020B-6; B; 6.jpg)
DSS4160FDBQ-7 Diodes Incorporated
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Description: SS Low Sat Transistor U-DFN2020-
Packaging: Bulk
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 100mA, 2V
Frequency - Transition: 175MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2983 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
19+ | 0.97 EUR |
21+ | 0.84 EUR |
100+ | 0.58 EUR |
500+ | 0.49 EUR |
1000+ | 0.41 EUR |
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Technische Details DSS4160FDBQ-7 Diodes Incorporated
Description: SS Low Sat Transistor U-DFN2020-, Packaging: Bulk, Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 405mW, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 100mA, 2V, Frequency - Transition: 175MHz, Supplier Device Package: U-DFN2020-6 (Type B), Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DSS4160FDBQ-7
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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DSS4160FDBQ-7 | Hersteller : Diodes Incorporated |
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