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DSS3540MQ-7B

DSS3540MQ-7B Diodes Incorporated

DSS3540MQ.pdf Hersteller: Diodes Incorporated
Description: SS Low Sat Transistor X1-DFN1006
Packaging: Bulk
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: X1-DFN1006-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 400 mW
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
29+0.62 EUR
41+ 0.44 EUR
100+ 0.22 EUR
500+ 0.2 EUR
1000+ 0.15 EUR
2000+ 0.14 EUR
5000+ 0.13 EUR
10000+ 0.12 EUR
Mindestbestellmenge: 29
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Technische Details DSS3540MQ-7B Diodes Incorporated

Description: SS Low Sat Transistor X1-DFN1006, Packaging: Bulk, Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V, Frequency - Transition: 100MHz, Supplier Device Package: X1-DFN1006-3, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 400 mW, Qualification: AEC-Q101.

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DSS3540MQ-7B Hersteller : Diodes Incorporated DSS3540M-3103961.pdf Bipolar Transistors - BJT SS Low Sat Transistor X1-DFN1006-3 T&R 10K
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