DN1509N8-G Microchip Technology
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 1.09 EUR |
Produktrezensionen
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Technische Details DN1509N8-G Microchip Technology
Description: MOSFET N-CH 90V 360MA TO243AA, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 360mA (Tj), Rds On (Max) @ Id, Vgs: 6Ohm @ 200mA, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 1.6W (Ta), Supplier Device Package: TO-243AA (SOT-89), Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 90 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V.
Weitere Produktangebote DN1509N8-G nach Preis ab 0.97 EUR bis 1.57 EUR
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DN1509N8-G | Hersteller : Microchip Technology |
 Trans MOSFET N-CH Si 90V 0.36A 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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DN1509N8-G | Hersteller : Microchip Technology |
Description: MOSFET N-CH 90V 360MA TO243AA Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360mA (Tj) Rds On (Max) @ Id, Vgs: 6Ohm @ 200mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 1.6W (Ta) Supplier Device Package: TO-243AA (SOT-89) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 90 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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DN1509N8-G | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 90V 0.36A 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 1700 Stücke: Lieferzeit 14-21 Tag (e) |
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DN1509N8-G | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 90V 0.36A 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 1700 Stücke: Lieferzeit 14-21 Tag (e) |
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DN1509N8-G | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 90V 0.36A 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DN1509N8-G | Hersteller : Microchip Technology |
MOSFETs MOSFET DEPLETION MODE 90V 6 |
auf Bestellung 6812 Stücke: Lieferzeit 10-14 Tag (e) |
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DN1509N8-G | Hersteller : Microchip Technology |
Description: MOSFET N-CH 90V 360MA TO243AA Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360mA (Tj) Rds On (Max) @ Id, Vgs: 6Ohm @ 200mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 1.6W (Ta) Supplier Device Package: TO-243AA (SOT-89) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 90 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V |
auf Bestellung 3100 Stücke: Lieferzeit 10-14 Tag (e) |
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DN1509N8-G | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 90V 0.36A 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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DN1509N8-G | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 90V 0.36A 4-Pin(3+Tab) SOT-89 T/R |
Produkt ist nicht verfügbar |
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DN1509N8-G | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 90V 0.36A 4-Pin(3+Tab) SOT-89 T/R |
Produkt ist nicht verfügbar |
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DN1509N8-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 90V; 0.3A; 1.6W; SOT89-3 Mounting: SMD Type of transistor: N-MOSFET On-state resistance: 6Ω Drain-source voltage: 90V Power dissipation: 1.6W Polarisation: unipolar Kind of package: reel; tape Case: SOT89-3 Kind of channel: depleted Gate-source voltage: ±20V Pulsed drain current: 0.3A Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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DN1509N8-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 90V; 0.3A; 1.6W; SOT89-3 Mounting: SMD Type of transistor: N-MOSFET On-state resistance: 6Ω Drain-source voltage: 90V Power dissipation: 1.6W Polarisation: unipolar Kind of package: reel; tape Case: SOT89-3 Kind of channel: depleted Gate-source voltage: ±20V Pulsed drain current: 0.3A |
Produkt ist nicht verfügbar |