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DMTH61M5SPSW-13 Diodes Incorporated

DMTH61M5SPSW.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
auf Bestellung 112500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.44 EUR
5000+ 1.38 EUR
Mindestbestellmenge: 2500
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Produktbewertung abgeben

Technische Details DMTH61M5SPSW-13 Diodes Incorporated

Description: MOSFET BVDSS: 41V~60V POWERDI506, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 225A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V, Power Dissipation (Max): 3.2W (Ta), 167W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerDI5060-8 (SWP), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V.

Weitere Produktangebote DMTH61M5SPSW-13 nach Preis ab 1.51 EUR bis 3.19 EUR

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Preis ohne MwSt
DMTH61M5SPSW-13 Hersteller : Diodes Incorporated DMTH61M5SPSW.pdf Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
auf Bestellung 114970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.19 EUR
10+ 2.65 EUR
100+ 2.11 EUR
500+ 1.78 EUR
1000+ 1.51 EUR
Mindestbestellmenge: 6
DMTH61M5SPSW-13 Hersteller : Diodes Incorporated DIOD_S_A0012956123_1-2513070.pdf MOSFET MOSFET BVDSS: 41V-60V PowerDI5060-8 T&R 2.5K
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