Type-UX;-;-8.jpg "DMTH47M2LFVWQ-13")
DMTH47M2LFVWQ-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 31V~40V PowerDI333
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.9W (Ta), 37.5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 881 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 16+ | 1.11 EUR |
| 19+ | 0.96 EUR |
| 100+ | 0.66 EUR |
| 3000+ | 0.42 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMTH47M2LFVWQ-13 Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V PowerDI333, Packaging: Bulk, Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 49A (Tc), Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V, Power Dissipation (Max): 2.9W (Ta), 37.5W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 881 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote DMTH47M2LFVWQ-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| DMTH47M2LFVWQ-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 9.6A; Idm: 196A; 2.9W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 9.6A Pulsed drain current: 196A Power dissipation: 2.9W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 12.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||
| DMTH47M2LFVWQ-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 9.6A; Idm: 196A; 2.9W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 9.6A Pulsed drain current: 196A Power dissipation: 2.9W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 12.3nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |