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DMTH46M7SFVWQ-7

DMTH46M7SFVWQ-7 Diodes Incorporated

DMTH46M7SFVWQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+0.45 EUR
6000+ 0.42 EUR
10000+ 0.39 EUR
Mindestbestellmenge: 2000
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Technische Details DMTH46M7SFVWQ-7 Diodes Incorporated

Description: MOSFET BVDSS: 31V~40V POWERDI333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc), Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V, Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMTH46M7SFVWQ-7 nach Preis ab 0.43 EUR bis 1.2 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMTH46M7SFVWQ-7 DMTH46M7SFVWQ-7 Hersteller : Diodes Incorporated DMTH46M7SFVWQ.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
15+1.18 EUR
18+ 1.02 EUR
100+ 0.71 EUR
500+ 0.59 EUR
1000+ 0.5 EUR
Mindestbestellmenge: 15
DMTH46M7SFVWQ-7 DMTH46M7SFVWQ-7 Hersteller : Diodes Incorporated DMTH46M7SFVWQ-3103835.pdf MOSFET MOSFET BVDSS: 31V-40V PowerDI3333-8/SWP T&R 2K
auf Bestellung 1954 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.2 EUR
10+ 1.05 EUR
100+ 0.72 EUR
500+ 0.6 EUR
1000+ 0.53 EUR
2000+ 0.45 EUR
4000+ 0.43 EUR
Mindestbestellmenge: 3