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DMTH43M8LPSQ-13

DMTH43M8LPSQ-13 Diodes Incorporated

DMTH43M8LPSQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 22A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2352500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.84 EUR
5000+ 0.8 EUR
12500+ 0.76 EUR
Mindestbestellmenge: 2500
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Technische Details DMTH43M8LPSQ-13 Diodes Incorporated

Description: MOSFET N-CH 40V 22A PWRDI5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, Power Dissipation (Max): 2.7W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI5060-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMTH43M8LPSQ-13 nach Preis ab 0.84 EUR bis 2.01 EUR

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DMTH43M8LPSQ-13 DMTH43M8LPSQ-13 Hersteller : Diodes Incorporated DIOD_S_A0004145349_1-2542402.pdf MOSFET MOSFET BVDSS: 31V-40V
auf Bestellung 2984 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.95 EUR
10+ 1.74 EUR
100+ 1.36 EUR
500+ 1.12 EUR
1000+ 0.89 EUR
2500+ 0.84 EUR
Mindestbestellmenge: 2
DMTH43M8LPSQ-13 DMTH43M8LPSQ-13 Hersteller : Diodes Incorporated DMTH43M8LPSQ.pdf Description: MOSFET N-CH 40V 22A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2354180 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.01 EUR
11+ 1.65 EUR
100+ 1.29 EUR
500+ 1.09 EUR
1000+ 0.89 EUR
Mindestbestellmenge: 9
DMTH43M8LPSQ-13 Hersteller : DIODES INCORPORATED DMTH43M8LPSQ.pdf DMTH43M8LPSQ-13 SMD N channel transistors
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