DMTH10H2M5STLWQ-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 61V~100V,POWERDI10
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 5.8W (Ta), 230.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: POWERDI1012-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 124.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8450 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1500+ | 3.45 EUR |
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Technische Details DMTH10H2M5STLWQ-13 Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V,POWERDI10, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 215A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V, Power Dissipation (Max): 5.8W (Ta), 230.8W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: POWERDI1012-8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 124.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8450 pF @ 50 V, Qualification: AEC-Q101.
Weitere Produktangebote DMTH10H2M5STLWQ-13 nach Preis ab 4.14 EUR bis 7.39 EUR
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DMTH10H2M5STLWQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V,POWERDI10 Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 215A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V Power Dissipation (Max): 5.8W (Ta), 230.8W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: POWERDI1012-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 124.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8450 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 2622 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH10H2M5STLWQ-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMTH10H2M5STLWQ-13 - Leistungs-MOSFET, n-Kanal, 100 V, 248 A, 0.00168 ohm, PowerDI 1012, Oberflächenmontage tariffCode: 85415000 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 248A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 5.8W Anzahl der Pins: 8Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00168ohm |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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DMTH10H2M5STLWQ-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMTH10H2M5STLWQ-13 - Leistungs-MOSFET, n-Kanal, 100 V, 248 A, 0.00168 ohm, PowerDI 1012, Oberflächenmontage tariffCode: 85415000 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 248A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 5.8W Anzahl der Pins: 8Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00168ohm |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH10H2M5STLWQ-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 61V-100V PowerDI1012-8 T&R 1.5K |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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