Produkte > DIODES INCORPORATED > DMT8007LPSW-13
DMT8007LPSW-13

DMT8007LPSW-13 Diodes Incorporated


DMT8007LPSW.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
Power Dissipation (Max): 1.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2682 pF @ 40 V
auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.69 EUR
Mindestbestellmenge: 2500
Produktrezensionen
Produktbewertung abgeben

Technische Details DMT8007LPSW-13 Diodes Incorporated

Description: MOSFET BVDSS: 61V~100V POWERDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V, Power Dissipation (Max): 1.5W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 1mA, Supplier Device Package: PowerDI5060-8 (Type UX), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 45.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2682 pF @ 40 V.

Weitere Produktangebote DMT8007LPSW-13 nach Preis ab 0.73 EUR bis 1.67 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMT8007LPSW-13 DMT8007LPSW-13 Hersteller : Diodes Incorporated DMT8007LPSW.pdf Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
Power Dissipation (Max): 1.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2682 pF @ 40 V
auf Bestellung 4590 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.67 EUR
13+ 1.36 EUR
100+ 1.06 EUR
500+ 0.9 EUR
1000+ 0.73 EUR
Mindestbestellmenge: 11