DMT8007LPSW-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
Power Dissipation (Max): 1.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2682 pF @ 40 V
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
Power Dissipation (Max): 1.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2682 pF @ 40 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.69 EUR |
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Technische Details DMT8007LPSW-13 Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V, Power Dissipation (Max): 1.5W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 1mA, Supplier Device Package: PowerDI5060-8 (Type UX), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 45.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2682 pF @ 40 V.
Weitere Produktangebote DMT8007LPSW-13 nach Preis ab 0.73 EUR bis 1.67 EUR
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DMT8007LPSW-13 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI50 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V Power Dissipation (Max): 1.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 45.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2682 pF @ 40 V |
auf Bestellung 4590 Stücke: Lieferzeit 10-14 Tag (e) |
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