DMT6012LSS-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 60V 10.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1522 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.24 EUR |
| 5000+ | 0.22 EUR |
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Technische Details DMT6012LSS-13 Diodes Incorporated
Description: MOSFET N-CH 60V 10.4A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1522 pF @ 30 V.
Weitere Produktangebote DMT6012LSS-13 nach Preis ab 0.21 EUR bis 0.7 EUR
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DMT6012LSS-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V SO-8 T&R 2.5K |
auf Bestellung 124802 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT6012LSS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 10.4A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1522 pF @ 30 V |
auf Bestellung 10252 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT6012LSS-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 60V 10.4A 8-Pin SO T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT6012LSS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.4A; Idm: 65A; 1.84W; SO8 Case: SO8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 65A Drain-source voltage: 60V Drain current: 8.4A On-state resistance: 14mΩ Type of transistor: N-MOSFET Power dissipation: 1.84W Polarisation: unipolar Gate charge: 22.2nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMT6012LSS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.4A; Idm: 65A; 1.84W; SO8 Case: SO8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 65A Drain-source voltage: 60V Drain current: 8.4A On-state resistance: 14mΩ Type of transistor: N-MOSFET Power dissipation: 1.84W Polarisation: unipolar Gate charge: 22.2nC Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |