DMT6011LSS-13 DIODES INCORPORATED
Hersteller: DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 85A; 2.1W; SO8
Case: SO8
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 14.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 85A
Gate charge: 22.2nC
Drain-source voltage: 60V
Drain current: 8.5A
Anzahl je Verpackung: 1 Stücke
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Technische Details DMT6011LSS-13 DIODES INCORPORATED
Description: MOSFET BVDSS: 41V~60V SO-8 T&R 2, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V, Power Dissipation (Max): 1.4W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1072 pF @ 30 V.
Weitere Produktangebote DMT6011LSS-13
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DMT6011LSS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V SO-8 T&R 2 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1072 pF @ 30 V |
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| DMT6011LSS-13 | Hersteller : Diodes Incorporated |
Diodes Inc. MOSFET BVDSS: 41V~60V SO-8 T&R 2.5K |
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DMT6011LSS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 85A; 2.1W; SO8 Case: SO8 Kind of package: reel; tape Mounting: SMD On-state resistance: 14.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 85A Gate charge: 22.2nC Drain-source voltage: 60V Drain current: 8.5A |
Produkt ist nicht verfügbar |