DMT6010LFG-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 60V 13A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.49 EUR |
| 6000+ | 0.47 EUR |
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Technische Details DMT6010LFG-13 Diodes Incorporated
Description: MOSFET N-CH 60V 13A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V, Power Dissipation (Max): 2.2W (Ta), 41W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V.
Weitere Produktangebote DMT6010LFG-13 nach Preis ab 0.49 EUR bis 1.31 EUR
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DMT6010LFG-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 13A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Power Dissipation (Max): 2.2W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V |
auf Bestellung 8475 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT6010LFG-13 | Hersteller : Diodes Incorporated |
MOSFET 60V N-Ch Enh Mode 22Vgss 2090pF 41.3nC |
auf Bestellung 3000 Stücke: Lieferzeit 66-70 Tag (e) |
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| DMT6010LFG-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 2.2W; PowerDI®3333-8 Kind of package: reel; tape Drain-source voltage: 60V Drain current: 25A On-state resistance: 11.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PowerDI®3333-8 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMT6010LFG-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 2.2W; PowerDI®3333-8 Kind of package: reel; tape Drain-source voltage: 60V Drain current: 25A On-state resistance: 11.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PowerDI®3333-8 |
Produkt ist nicht verfügbar |