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DMT6009LPS-13

DMT6009LPS-13 Diodes Zetex


dmt6009lps.pdf Hersteller: Diodes Zetex
Trans MOSFET N-CH 60V 10.6A 8-Pin PowerDI EP T/R
auf Bestellung 52500 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2500+0.62 EUR
Mindestbestellmenge: 2500
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Technische Details DMT6009LPS-13 Diodes Zetex

Description: MOSFET N-CHA 60V 10.6A POWERDI, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 87A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V, Power Dissipation (Max): 2.3W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PowerDI5060-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMT6009LPS-13 nach Preis ab 0.68 EUR bis 1.72 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMT6009LPS-13 DMT6009LPS-13 Hersteller : Diodes Incorporated DMT6009LPS.pdf Description: MOSFET N-CHA 60V 10.6A POWERDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3226 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.71 EUR
13+ 1.4 EUR
100+ 1.09 EUR
500+ 0.92 EUR
1000+ 0.75 EUR
Mindestbestellmenge: 11
DMT6009LPS-13 DMT6009LPS-13 Hersteller : Diodes Incorporated DMT6009LPS-3214712.pdf MOSFET MOSFET BVDSS: 41V-60V
auf Bestellung 2525 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.72 EUR
10+ 1.41 EUR
100+ 1.09 EUR
500+ 0.93 EUR
1000+ 0.76 EUR
2500+ 0.7 EUR
5000+ 0.68 EUR
Mindestbestellmenge: 2
DMT6009LPS-13 DMT6009LPS-13 Hersteller : Diodes Zetex dmt6009lps.pdf Trans MOSFET N-CH 60V 10.6A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT6009LPS-13 DMT6009LPS-13 Hersteller : Diodes Inc 111dmt6009lps.pdf Trans MOSFET N-CH 60V 10.6A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT6009LPS-13 DMT6009LPS-13 Hersteller : Diodes Zetex dmt6009lps.pdf Trans MOSFET N-CH 60V 10.6A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT6009LPS-13 Hersteller : DIODES INCORPORATED DMT6009LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 160A; 2.3W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerDI5060-8
Pulsed drain current: 160A
Drain-source voltage: 60V
Drain current: 9.1A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Gate charge: 33.5nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMT6009LPS-13 DMT6009LPS-13 Hersteller : Diodes Incorporated DMT6009LPS.pdf Description: MOSFET N-CHA 60V 10.6A POWERDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMT6009LPS-13 Hersteller : DIODES INCORPORATED DMT6009LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 160A; 2.3W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerDI5060-8
Pulsed drain current: 160A
Drain-source voltage: 60V
Drain current: 9.1A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Gate charge: 33.5nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Produkt ist nicht verfügbar