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DMPH4026SFVWQ-13 Diodes Incorporated


DMPH4026SFVWQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 20 V
Qualification: AEC-Q101
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Technische Details DMPH4026SFVWQ-13 Diodes Incorporated

Description: MOSFET BVDSS: 31V~40V POWERDI333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 45.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 20 V, Qualification: AEC-Q101.

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DMPH4026SFVWQ-13 Hersteller : Diodes Incorporated DMPH4026SFVWQ.pdf MOSFET MOSFET BVDSS: 31V~40V PowerDI3333-8 T&R 3K
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