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DMPH3010LK3Q-13

DMPH3010LK3Q-13 Diodes Incorporated


DMPH3010LK3.pdf Hersteller: Diodes Incorporated
Description: MOSFET P-CHANNEL 30V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.9W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6807 pF @ 15 V
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Technische Details DMPH3010LK3Q-13 Diodes Incorporated

Description: MOSFET P-CHANNEL 30V 50A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V, Power Dissipation (Max): 3.9W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: TO-252, (D-Pak), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6807 pF @ 15 V.

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DMPH3010LK3Q-13 DMPH3010LK3Q-13 Hersteller : Diodes Incorporated diodes_inc_diod-s-a0002833337-1-1748996.pdf MOSFET MOSFET BVDSS: 25V~30V TO252 T&R 2.5K
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