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DMP6250SEQ-13 Diodes Incorporated


DIOD_S_A0012955724_1-2513143.pdf Hersteller: Diodes Incorporated
MOSFET MOSFET BVDSS: 41V~60V SOT223 T&R 2.5K
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Lieferzeit 66-70 Tag (e)
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4+0.85 EUR
10+ 0.69 EUR
100+ 0.47 EUR
1000+ 0.27 EUR
2500+ 0.23 EUR
10000+ 0.21 EUR
25000+ 0.19 EUR
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Technische Details DMP6250SEQ-13 Diodes Incorporated

Description: MOSFET BVDSS: 41V~60V SOT223 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V, Power Dissipation (Max): 1.8W (Ta), 14W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-223-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 30 V, Qualification: AEC-Q101.

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DMP6250SEQ-13 Hersteller : Diodes Inc dmp6250seq.pdf MOSFET BVDSS: 41V60V SOT223 T&R 2.5K
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DMP6250SEQ-13 DMP6250SEQ-13 Hersteller : Diodes Incorporated DMP6250SEQ.pdf Description: MOSFET BVDSS: 41V~60V SOT223 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Power Dissipation (Max): 1.8W (Ta), 14W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar