DMP3165L-7 Diodes Incorporated
auf Bestellung 9918 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 0.59 EUR |
| 10+ | 0.44 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.14 EUR |
| 3000+ | 0.13 EUR |
| 9000+ | 0.12 EUR |
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Technische Details DMP3165L-7 Diodes Incorporated
Description: MOSFET P-CH 30V 3.3A SOT23 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 10V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V.
Weitere Produktangebote DMP3165L-7 nach Preis ab 0.16 EUR bis 0.65 EUR
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DMP3165L-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET P-CH 30V 3.3A SOT23 T&RPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V |
auf Bestellung 2971 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3165L-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -13A; 1.3W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.7A Pulsed drain current: -13A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.134Ω Mounting: SMD Gate charge: 2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
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DMP3165L-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 30V 3.3A SOT23 T&R Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V |
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DMP3165L-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -13A; 1.3W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.7A Pulsed drain current: -13A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.134Ω Mounting: SMD Gate charge: 2nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |