auf Bestellung 16690 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 0.75 EUR |
| 10+ | 0.53 EUR |
| 100+ | 0.22 EUR |
| 1000+ | 0.14 EUR |
| 2500+ | 0.13 EUR |
| 10000+ | 0.11 EUR |
| 20000+ | 0.1 EUR |
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Technische Details DMP3125L-13 Diodes Incorporated
Description: MOSFET P-CH 30V 2.5A SOT23 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 95mOhm @ 3.8A, 10V, Power Dissipation (Max): 650mW (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 254 pF @ 25 V.
Weitere Produktangebote DMP3125L-13 nach Preis ab 0.15 EUR bis 0.83 EUR
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DMP3125L-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET P-CH 30V 2.5A SOT23 T&RPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 3.8A, 10V Power Dissipation (Max): 650mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 254 pF @ 25 V |
auf Bestellung 4780 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3125L-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2A; Idm: -10A; 1.2W; SOT23 Mounting: SMD Kind of package: reel; tape Pulsed drain current: -10A Power dissipation: 1.2W Gate charge: 3.1nC Polarisation: unipolar Drain current: -2A Kind of channel: enhanced Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V Case: SOT23 On-state resistance: 0.145Ω Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP3125L-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 30V 2.5A SOT23 T&R Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 3.8A, 10V Power Dissipation (Max): 650mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 254 pF @ 25 V |
Produkt ist nicht verfügbar |
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DMP3125L-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2A; Idm: -10A; 1.2W; SOT23 Mounting: SMD Kind of package: reel; tape Pulsed drain current: -10A Power dissipation: 1.2W Gate charge: 3.1nC Polarisation: unipolar Drain current: -2A Kind of channel: enhanced Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V Case: SOT23 On-state resistance: 0.145Ω |
Produkt ist nicht verfügbar |