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DMP3010LPS-13

DMP3010LPS-13 Diodes Incorporated


DMP3010LPS.pdf Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 14.5A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Power Dissipation (Max): 2.18W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 126.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6234 pF @ 15 V
auf Bestellung 37500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.7 EUR
5000+ 0.67 EUR
12500+ 0.63 EUR
Mindestbestellmenge: 2500
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Technische Details DMP3010LPS-13 Diodes Incorporated

Description: MOSFET P-CH 30V 14.5A PWRDI5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V, Power Dissipation (Max): 2.18W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: PowerDI5060-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 126.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6234 pF @ 15 V.

Weitere Produktangebote DMP3010LPS-13 nach Preis ab 0.74 EUR bis 1.69 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMP3010LPS-13 DMP3010LPS-13 Hersteller : Diodes Incorporated DMP3010LPS.pdf Description: MOSFET P-CH 30V 14.5A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Power Dissipation (Max): 2.18W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 126.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6234 pF @ 15 V
auf Bestellung 39750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.69 EUR
13+ 1.38 EUR
100+ 1.07 EUR
500+ 0.91 EUR
1000+ 0.74 EUR
Mindestbestellmenge: 11
DMP3010LPS-13 DMP3010LPS-13 Hersteller : Diodes Incorporated ds32239-310945.pdf MOSFET P-CH -30V VBR 1KV 2.18W PD Min RDS
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
DMP3010LPS-13 DMP3010LPS-13 Hersteller : Diodes Inc 6122110784013784ds32239.pdf Trans MOSFET P-CH 30V 36A 8-Pin PowerDI EP T/R
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