![DMP2018LFK-7 DMP2018LFK-7](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/2447/31; U-DFN2523-6; ; 6.jpg)
DMP2018LFK-7 Diodes Incorporated
![DMP2018LFK.pdf](/images/adobe-acrobat.png)
Description: MOSFET P-CH 20V 9.2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: U-DFN2523-6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4748 pF @ 10 V
auf Bestellung 35250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.24 EUR |
6000+ | 0.23 EUR |
9000+ | 0.22 EUR |
30000+ | 0.21 EUR |
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Technische Details DMP2018LFK-7 Diodes Incorporated
Description: MOSFET P-CH 20V 9.2A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 3.6A, 4.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 200µA, Supplier Device Package: U-DFN2523-6, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4748 pF @ 10 V.
Weitere Produktangebote DMP2018LFK-7 nach Preis ab 0.22 EUR bis 0.72 EUR
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DMP2018LFK-7 | Hersteller : Diodes Incorporated |
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auf Bestellung 139079 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2018LFK-7 | Hersteller : Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 3.6A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 200µA Supplier Device Package: U-DFN2523-6 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4748 pF @ 10 V |
auf Bestellung 35438 Stücke: Lieferzeit 10-14 Tag (e) |
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