DMNH4006SK3Q-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 40V 20A/140A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.95 EUR |
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Technische Details DMNH4006SK3Q-13 Diodes Incorporated
Description: MOSFET N-CH 40V 20A/140A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V, Power Dissipation (Max): 2.2W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote DMNH4006SK3Q-13 nach Preis ab 0.92 EUR bis 2.31 EUR
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DMNH4006SK3Q-13 | Hersteller : Diodes Incorporated |
MOSFET 40V N-Ch Enh Mode AEC-Q101 |
auf Bestellung 5928 Stücke: Lieferzeit 10-14 Tag (e) |
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DMNH4006SK3Q-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 40V 20A/140A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 4997 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMNH4006SK3Q-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 16A; Idm: 200A; 3.6W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 16A Pulsed drain current: 200A Power dissipation: 3.6W Case: TO252 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 51nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMNH4006SK3Q-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 16A; Idm: 200A; 3.6W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 16A Pulsed drain current: 200A Power dissipation: 3.6W Case: TO252 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 51nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |