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DMN66D0LDWQ-13

DMN66D0LDWQ-13 Diodes Incorporated


DMN66D0LDWQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.217A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 400mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 217mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 29.3pF @ 25V
Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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Technische Details DMN66D0LDWQ-13 Diodes Incorporated

Description: MOSFET 2N-CH 60V 0.217A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 400mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 217mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 29.3pF @ 25V, Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 5V, Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-363, Grade: Automotive, Qualification: AEC-Q101.

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DMN66D0LDWQ-13 Hersteller : Diodes Incorporated DMN66D0LDWQ.pdf MOSFET MOSFET BVDSS: 41V-60V SOT363 T&R 10K
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