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DMN65D8LDWQ-13 Diodes Zetex


DMN65D8LDWQ.pdf Hersteller: Diodes Zetex
MOSFET BVDSS, 61V to 100V SOT363 10K
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Technische Details DMN65D8LDWQ-13 Diodes Zetex

Description: MOSFET 2N-CH 60V 0.18A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 300mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 180mA, Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V, Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-363, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.

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DMN65D8LDWQ-13 DMN65D8LDWQ-13 Hersteller : Diodes Incorporated DMN65D8LDWQ.pdf Description: MOSFET 2N-CH 60V 0.18A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 180mA
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMN65D8LDWQ-13 DMN65D8LDWQ-13 Hersteller : Diodes Incorporated DMN65D8LDWQ.pdf MOSFET 60V N-Ch Dual Enh 20Vgss 300mW Pd
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