DMN63D1LW-7 DIODES INCORPORATED
Hersteller: DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.2A; 410mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.2A
Power dissipation: 0.41W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 304pC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 20 Stücke
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Technische Details DMN63D1LW-7 DIODES INCORPORATED
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.2A; 410mW; SOT323, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 0.34A, Pulsed drain current: 1.2A, Power dissipation: 0.41W, Case: SOT323, Gate-source voltage: ±20V, On-state resistance: 3Ω, Mounting: SMD, Gate charge: 304pC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 20 Stücke.
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DMN63D1LW-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.2A; 410mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.2A Power dissipation: 0.41W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 304pC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |