DMN63D1LDW-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 60V 0.25A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 310mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-363
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Technische Details DMN63D1LDW-13 Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.25A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 310mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 250mA, Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: SOT-363.
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DMN63D1LDW-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS |
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