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DMN62D0UV-7

DMN62D0UV-7 Diodes Incorporated

DMN62D0UV.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.49A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 470mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 490mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.12 EUR
9000+ 0.1 EUR
30000+ 0.098 EUR
75000+ 0.081 EUR
Mindestbestellmenge: 3000
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Technische Details DMN62D0UV-7 Diodes Incorporated

Description: MOSFET 2N-CH 60V 0.49A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 470mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 490mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V, Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-563, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMN62D0UV-7 nach Preis ab 0.14 EUR bis 0.67 EUR

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DMN62D0UV-7 DMN62D0UV-7 Hersteller : Diodes Incorporated DMN62D0UV.pdf Description: MOSFET 2N-CH 60V 0.49A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 470mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 490mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 80689 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
27+0.67 EUR
38+ 0.47 EUR
100+ 0.24 EUR
500+ 0.19 EUR
1000+ 0.14 EUR
Mindestbestellmenge: 27
DMN62D0UV-7 Hersteller : Diodes Zetex DMN62D0UV.pdf MOSFET BVDSS: 41V60V SOT563 T&R 3K
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DMN62D0UV-7 Hersteller : Diodes Incorporated DMN62D0U-1594657.pdf MOSFET MOSFET BVDSS: 41V-60V SOT563 T&R 3K
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