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DMN62D0LFD-7

DMN62D0LFD-7 Diodes Incorporated

DMN62D0LFD.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 310MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V
Power Dissipation (Max): 480mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1212-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 25 V
auf Bestellung 276000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.1 EUR
6000+ 0.091 EUR
15000+ 0.077 EUR
30000+ 0.073 EUR
75000+ 0.068 EUR
150000+ 0.059 EUR
Mindestbestellmenge: 3000
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Technische Details DMN62D0LFD-7 Diodes Incorporated

Description: MOSFET N-CH 60V 310MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-UDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 310mA (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V, Power Dissipation (Max): 480mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X1-DFN1212-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 25 V.

Weitere Produktangebote DMN62D0LFD-7 nach Preis ab 0.054 EUR bis 0.6 EUR

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Preis ohne MwSt
DMN62D0LFD-7 DMN62D0LFD-7 Hersteller : Diodes Incorporated DMN62D0LFD.pdf Description: MOSFET N-CH 60V 310MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V
Power Dissipation (Max): 480mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1212-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 25 V
auf Bestellung 279932 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
30+0.6 EUR
36+ 0.49 EUR
44+ 0.41 EUR
100+ 0.26 EUR
250+ 0.2 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 30
DMN62D0LFD-7 DMN62D0LFD-7 Hersteller : Diodes Incorporated DMN62D0LFD-271619.pdf MOSFET N-Ch Enh Mode FET 60Vdss 20Vgss
auf Bestellung 19456 Stücke:
Lieferzeit 10-14 Tag (e)
DMN62D0LFD-7 Hersteller : Diodes Zetex dmn62d0lfd.pdf Trans MOSFET N-CH 60V 0.31A 3-Pin X1-DFN EP T/R
auf Bestellung 183000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3000+0.054 EUR
Mindestbestellmenge: 3000
DMN62D0LFD-7 Hersteller : Diodes Inc dmn62d0lfd.pdf Trans MOSFET N-CH 60V 0.31A 3-Pin X1-DFN EP T/R
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