auf Bestellung 70000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.1 EUR |
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Technische Details DMN62D0LFB-7B Diodes Zetex
Description: MOSFET N-CH 60V 100MA 3-DFN, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V, Power Dissipation (Max): 470mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X1-DFN1006-3, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.45 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V.
Weitere Produktangebote DMN62D0LFB-7B nach Preis ab 0.11 EUR bis 0.7 EUR
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DMN62D0LFB-7B | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 60V 100MA 3-DFNPackaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V Power Dissipation (Max): 470mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.45 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V |
auf Bestellung 80000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN62D0LFB-7B | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 100MA 3-DFN Packaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V Power Dissipation (Max): 470mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.45 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V |
auf Bestellung 80000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0LFB-7B | Hersteller : Diodes Incorporated |
MOSFET 2N7002 Family X2-DFN1006-3 T&R 10K |
auf Bestellung 9940 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0LFB-7B | Hersteller : Diodes Inc |
Trans MOSFET N-CH 60V 0.32A 3-Pin DFN T/R |
Produkt ist nicht verfügbar |
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| DMN62D0LFB-7B | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 75mA; Idm: 1A; 500mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 75mA Pulsed drain current: 1A Power dissipation: 0.5W Case: X1-DFN1006-3 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 0.9nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMN62D0LFB-7B | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 75mA; Idm: 1A; 500mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 75mA Pulsed drain current: 1A Power dissipation: 0.5W Case: X1-DFN1006-3 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 0.9nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |