DMN61D8L-13 DIODES INCORPORATED


DMN61D8L-LVT.pdf Hersteller: DIODES INCORPORATED
DMN61D8L-13 SMD N channel transistors
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Technische Details DMN61D8L-13 DIODES INCORPORATED

Description: MOSFET N-CH 60V 470MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 470mA (Ta), Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V, Power Dissipation (Max): 390mW (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 3V, 5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V.

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DMN61D8L-13 DMN61D8L-13 Hersteller : Diodes Incorporated DMN61D8L-LVT.pdf Description: MOSFET N-CH 60V 470MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Power Dissipation (Max): 390mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
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DMN61D8L-13 DMN61D8L-13 Hersteller : Diodes Incorporated DIOD_S_A0005424625_1-2542536.pdf MOSFET 60V Switching Diode 1.8Ohm at 5Vgs 470mA
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