auf Bestellung 100000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.072 EUR |
| 20000+ | 0.069 EUR |
| 30000+ | 0.066 EUR |
| 50000+ | 0.058 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN6075S-13 Diodes Zetex
Description: MOSFET N-CH 60V 2A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 85mOhm @ 3.2A, 10V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V.
Weitere Produktangebote DMN6075S-13 nach Preis ab 0.068 EUR bis 0.67 EUR
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DMN6075S-13 | Hersteller : Diodes Zetex |
 Trans MOSFET N-CH 60V 2.5A 3-Pin SOT-23 T/R |
auf Bestellung 1000000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6075S-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 2.5A 3-Pin SOT-23 T/R |
auf Bestellung 100000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6075S-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 2A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3.2A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6075S-13 | Hersteller : Diodes Incorporated |
MOSFET 60V N-Ch Enh FET 20Vgss 0.8W 600pF |
auf Bestellung 9470 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6075S-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 2A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3.2A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V |
auf Bestellung 13432 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6075S-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 60V 2.5A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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DMN6075S-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 700mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 12A Power dissipation: 0.7W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 12.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMN6075S-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 700mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 12A Power dissipation: 0.7W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 12.3nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |