DMN6070SFCL-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 3A X1-DFN1616-6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: X1-DFN1616-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V
Description: MOSFET N-CH 60V 3A X1-DFN1616-6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: X1-DFN1616-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.25 EUR |
6000+ | 0.23 EUR |
9000+ | 0.22 EUR |
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Technische Details DMN6070SFCL-7 Diodes Incorporated
Description: MOSFET N-CH 60V 3A X1-DFN1616-6, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 10V, Power Dissipation (Max): 600mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: X1-DFN1616-6 (Type E), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V.
Weitere Produktangebote DMN6070SFCL-7 nach Preis ab 0.24 EUR bis 0.74 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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DMN6070SFCL-7 | Hersteller : Diodes Incorporated | MOSFET N-Ch 31V to 99V 60V 120mOhm 606pF |
auf Bestellung 2755 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6070SFCL-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 3A X1-DFN1616-6 Packaging: Cut Tape (CT) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: X1-DFN1616-6 (Type E) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V |
auf Bestellung 16922 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6070SFCL-7 Produktcode: 143691 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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DMN6070SFCL-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 1.8W Case: X1-DFN1616-6 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 12.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMN6070SFCL-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 1.8W Case: X1-DFN1616-6 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 12.3nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |