DMN6040SE-13 Diodes Zetex
auf Bestellung 17500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.24 EUR |
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Technische Details DMN6040SE-13 Diodes Zetex
Description: MOSFET BVDSS: 41V 60V SOT223 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 12A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-223-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V.
Weitere Produktangebote DMN6040SE-13 nach Preis ab 0.24 EUR bis 0.92 EUR
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DMN6040SE-13 | Hersteller : Diodes Zetex |
 Trans MOSFET N-CH 60V 5A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6040SE-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 5A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6040SE-13 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 41V 60V SOT223 T&R Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 12A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V |
auf Bestellung 17500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6040SE-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V |
auf Bestellung 20852 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6040SE-13 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 41V 60V SOT223 T&R Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 12A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V |
auf Bestellung 19939 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN6040SE-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 60V 5A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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DMN6040SE-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 5A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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| DMN6040SE-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5.5A; Idm: 30A; 1.2W; SOT223 Kind of package: reel; tape Mounting: SMD Case: SOT223 Drain-source voltage: 60V Drain current: 5.5A On-state resistance: 55mΩ Type of transistor: N-MOSFET Power dissipation: 1.2W Polarisation: unipolar Gate charge: 22.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMN6040SE-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5.5A; Idm: 30A; 1.2W; SOT223 Kind of package: reel; tape Mounting: SMD Case: SOT223 Drain-source voltage: 60V Drain current: 5.5A On-state resistance: 55mΩ Type of transistor: N-MOSFET Power dissipation: 1.2W Polarisation: unipolar Gate charge: 22.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A |
Produkt ist nicht verfügbar |