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DMN6013LFG-13

DMN6013LFG-13 Diodes Incorporated

DMN6013LFG.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 10.3A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.48 EUR
6000+ 0.45 EUR
Mindestbestellmenge: 3000
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Technische Details DMN6013LFG-13 Diodes Incorporated

Description: MOSFET N-CH 60V 10.3A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V.

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DMN6013LFG-13 DMN6013LFG-13 Hersteller : Diodes Incorporated DMN6013LFG.pdf MOSFET 60V N-Ch Enh FET 20Vgs 10.3A 2577pF
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