auf Bestellung 24400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 0.75 EUR |
| 10+ | 0.58 EUR |
| 100+ | 0.36 EUR |
| 1000+ | 0.19 EUR |
| 3000+ | 0.17 EUR |
| 9000+ | 0.15 EUR |
| 24000+ | 0.14 EUR |
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Technische Details DMN5L06VAK-7 Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.28A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 250mW, Drain to Source Voltage (Vdss): 50V, Current - Continuous Drain (Id) @ 25°C: 280mA, Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-563.
Weitere Produktangebote DMN5L06VAK-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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DMN5L06VAK-7 | Hersteller : Diodes Inc |
 Trans MOSFET N-CH 50V 0.28A 6-Pin SOT-563 T/R |
Produkt ist nicht verfügbar |
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| DMN5L06VAK-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 280mA; Idm: 1.5A; 250mW; SOT563 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.28A Pulsed drain current: 1.5A Power dissipation: 0.25W Case: SOT563 Gate-source voltage: ±20V; ±40V On-state resistance: 3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMN5L06VAK-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 50V 0.28A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 |
Produkt ist nicht verfügbar |
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DMN5L06VAK-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 50V 0.28A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 |
Produkt ist nicht verfügbar |
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| DMN5L06VAK-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 280mA; Idm: 1.5A; 250mW; SOT563 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.28A Pulsed drain current: 1.5A Power dissipation: 0.25W Case: SOT563 Gate-source voltage: ±20V; ±40V On-state resistance: 3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |