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DMN55D0UTQ-7

DMN55D0UTQ-7 Diodes Incorporated


ds31330.pdf Hersteller: Diodes Incorporated
MOSFET N-Ch Enh Mode FET 50Vdss 12Vgss 160mA
auf Bestellung 393 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.64 EUR
10+ 0.49 EUR
100+ 0.27 EUR
1000+ 0.14 EUR
3000+ 0.12 EUR
9000+ 0.097 EUR
24000+ 0.09 EUR
Mindestbestellmenge: 5
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Technische Details DMN55D0UTQ-7 Diodes Incorporated

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 50V; 160mA; Idm: 560A; 200mW; SOT523, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 50V, Drain current: 0.16A, Pulsed drain current: 560A, Power dissipation: 0.2W, Case: SOT523, Gate-source voltage: ±12V, On-state resistance: 5Ω, Mounting: SMD, Gate charge: 295nC, Kind of package: reel; tape, Kind of channel: enhanced, Application: automotive industry, Anzahl je Verpackung: 10 Stücke.

Weitere Produktangebote DMN55D0UTQ-7

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DMN55D0UTQ-7 DMN55D0UTQ-7 Hersteller : Diodes Inc ds31330.pdf Trans MOSFET N-CH 50V 0.16A Automotive 3-Pin SOT-523 T/R
Produkt ist nicht verfügbar
DMN55D0UTQ-7 DMN55D0UTQ-7 Hersteller : DIODES INCORPORATED ds31330.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 160mA; Idm: 560A; 200mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.16A
Pulsed drain current: 560A
Power dissipation: 0.2W
Case: SOT523
Gate-source voltage: ±12V
On-state resistance:
Mounting: SMD
Gate charge: 295nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
DMN55D0UTQ-7 DMN55D0UTQ-7 Hersteller : Diodes Incorporated ds31330.pdf Description: MOSFET N-CH 50V 160MA SOT-523
Produkt ist nicht verfügbar
DMN55D0UTQ-7 DMN55D0UTQ-7 Hersteller : Diodes Incorporated ds31330.pdf Description: MOSFET N-CH 50V 160MA SOT-523
Produkt ist nicht verfügbar
DMN55D0UTQ-7 DMN55D0UTQ-7 Hersteller : DIODES INCORPORATED ds31330.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 160mA; Idm: 560A; 200mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.16A
Pulsed drain current: 560A
Power dissipation: 0.2W
Case: SOT523
Gate-source voltage: ±12V
On-state resistance:
Mounting: SMD
Gate charge: 295nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar