auf Bestellung 160000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.04 EUR |
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Technische Details DMN53D0LW-13 Diodes Zetex
Description: MOSFET N-CH 50V 360MA SOT323, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 360mA (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 270mA, 10V, Power Dissipation (Max): 320mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 100µA, Supplier Device Package: SOT-323, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 45.8 pF @ 25 V.
Weitere Produktangebote DMN53D0LW-13 nach Preis ab 0.045 EUR bis 0.058 EUR
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DMN53D0LW-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 50V 360MA SOT323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 270mA, 10V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 45.8 pF @ 25 V |
auf Bestellung 160000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN53D0LW-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 50V 0.36A 3-Pin SOT-323 T/R |
Produkt ist nicht verfügbar |
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DMN53D0LW-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 50V 0.36A 3-Pin SOT-323 T/R |
Produkt ist nicht verfügbar |
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DMN53D0LW-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.7A; 420mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.7A Power dissipation: 0.42W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 1.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMN53D0LW-13 | Hersteller : Diodes Incorporated |
MOSFET FET Enhancement Mode N-Ch .3A 2.5Vgs 56pF |
Produkt ist nicht verfügbar |
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DMN53D0LW-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.7A; 420mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.7A Power dissipation: 0.42W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 1.2nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |