Produkte > DIODES INCORPORATED > DMN52D0U-7
DMN52D0U-7

DMN52D0U-7 Diodes Incorporated

DMN52D0U.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 500mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V
auf Bestellung 171000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.11 EUR
6000+ 0.098 EUR
9000+ 0.081 EUR
30000+ 0.08 EUR
75000+ 0.072 EUR
150000+ 0.062 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details DMN52D0U-7 Diodes Incorporated

Description: MOSFET BVDSS: 41V~60V SOT23 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V, Power Dissipation (Max): 500mW, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V.

Weitere Produktangebote DMN52D0U-7

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMN52D0U-7 Hersteller : Diodes Zetex DMN52D0U.pdf MOSFET BVDSS: 41V60V SOT23 T&R 3K
Produkt ist nicht verfügbar
DMN52D0U-7 Hersteller : Diodes Incorporated DMN52D0U-3240599.pdf MOSFET MOSFET BVDSS: 41V-60V SOT23 T&R 3K
Produkt ist nicht verfügbar