DMN4035LQ-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 40V 4.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
Power Dissipation (Max): 720mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.22 EUR |
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Technische Details DMN4035LQ-7 Diodes Incorporated
Description: MOSFET N-CH 40V 4.6A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V, Power Dissipation (Max): 720mW, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote DMN4035LQ-7 nach Preis ab 0.18 EUR bis 0.65 EUR
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DMN4035LQ-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 31V-40V |
auf Bestellung 4496 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN4035LQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 40V 4.6A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V Power Dissipation (Max): 720mW Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 5386 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN4035LQ-7 | Hersteller : Diodes Zetex |
N-Channel Enhancement Mode MOSFET Automotive AEC-Q101 |
auf Bestellung 495000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN4035LQ-7 | Hersteller : Diodes Inc |
N-Channel Enhancement Mode MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN4035LQ-7 | Hersteller : Diodes Zetex |
N-Channel Enhancement Mode MOSFET Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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DMN4035LQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 3.7A; Idm: 25A; 1.4W; SOT23 Case: SOT23 Mounting: SMD On-state resistance: 52mΩ Application: automotive industry Kind of package: reel; tape Power dissipation: 1.4W Drain-source voltage: 40V Polarisation: unipolar Gate charge: 12.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 25A Type of transistor: N-MOSFET Drain current: 3.7A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMN4035LQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 3.7A; Idm: 25A; 1.4W; SOT23 Case: SOT23 Mounting: SMD On-state resistance: 52mΩ Application: automotive industry Kind of package: reel; tape Power dissipation: 1.4W Drain-source voltage: 40V Polarisation: unipolar Gate charge: 12.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 25A Type of transistor: N-MOSFET Drain current: 3.7A |
Produkt ist nicht verfügbar |