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DMN4030LK3Q-13

DMN4030LK3Q-13 Diodes Incorporated


DMN4030LK3Q.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 9.4A TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Power Dissipation (Max): 2.14W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 604 pF @ 20 V
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Technische Details DMN4030LK3Q-13 Diodes Incorporated

Description: MOSFET N-CH 40V 9.4A TO252 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V, Power Dissipation (Max): 2.14W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252, (D-Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 604 pF @ 20 V.

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DMN4030LK3Q-13 DMN4030LK3Q-13 Hersteller : Diodes Incorporated DIOD_S_A0011928992_1-2543613.pdf MOSFET MOSFET BVDSS: 31V-40V
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