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DMN3401LVQ-7

DMN3401LVQ-7 Diodes Incorporated

DMN3401LVQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.8A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.6V @ 100µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.095 EUR
6000+ 0.091 EUR
9000+ 0.079 EUR
30000+ 0.077 EUR
Mindestbestellmenge: 3000
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Technische Details DMN3401LVQ-7 Diodes Incorporated

Description: MOSFET 2N-CH 30V 0.8A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 490mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V, Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V, FET Feature: Standard, Vgs(th) (Max) @ Id: 1.6V @ 100µA, Supplier Device Package: SOT-563, Part Status: Active.

Weitere Produktangebote DMN3401LVQ-7 nach Preis ab 0.11 EUR bis 0.53 EUR

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Preis ohne MwSt
DMN3401LVQ-7 DMN3401LVQ-7 Hersteller : Diodes Incorporated DMN3401LVQ.pdf Description: MOSFET 2N-CH 30V 0.8A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.6V @ 100µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 74900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
34+0.53 EUR
48+ 0.37 EUR
100+ 0.19 EUR
500+ 0.15 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 34
DMN3401LVQ-7 Hersteller : Diodes Incorporated DMN3401LVQ-3103785.pdf MOSFET MOSFET BVDSS: 25V-30V SOT563 T&R 3K
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