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DMN32M6LCA8-7 Diodes Incorporated


DMN32M6LCA8.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X4-DSN6025
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 15V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 42.7nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: X4-DSN6025-8
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Technische Details DMN32M6LCA8-7 Diodes Incorporated

Description: MOSFET BVDSS: 25V~30V X4-DSN6025, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, No Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 15V, Rds On (Max) @ Id, Vgs: 2.6mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 42.7nC @ 4.5V, Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: X4-DSN6025-8.

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DMN32M6LCA8-7 Hersteller : Diodes Incorporated DMN32M6LCA8-3392628.pdf MOSFET MOSFET BVDSS: 25V~30V X4-DSN6025-8 T&R 3K
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