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DMN32D0LFB4-7B

DMN32D0LFB4-7B Diodes Incorporated

DMN32D0LFB4.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V-30V X2-DFN1006
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 44.8 pF @ 15 V
auf Bestellung 200000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.12 EUR
50000+ 0.1 EUR
Mindestbestellmenge: 10000
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Technische Details DMN32D0LFB4-7B Diodes Incorporated

Description: MOSFET BVDSS: 25V-30V X2-DFN1006, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 440mA (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: X2-DFN1006-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 44.8 pF @ 15 V.

Weitere Produktangebote DMN32D0LFB4-7B nach Preis ab 0.092 EUR bis 0.65 EUR

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DMN32D0LFB4-7B DMN32D0LFB4-7B Hersteller : Diodes Incorporated diod_s_a0009645186_1-2265734.pdf MOSFET MOSFET BVDSS: 25V-30V X2-DFN1006-3 T&R 10K
auf Bestellung 19100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.64 EUR
10+ 0.48 EUR
100+ 0.3 EUR
1000+ 0.16 EUR
2500+ 0.14 EUR
10000+ 0.13 EUR
20000+ 0.11 EUR
Mindestbestellmenge: 5
DMN32D0LFB4-7B DMN32D0LFB4-7B Hersteller : Diodes Incorporated DMN32D0LFB4.pdf Description: MOSFET BVDSS: 25V-30V X2-DFN1006
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 44.8 pF @ 15 V
auf Bestellung 209900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.65 EUR
39+ 0.46 EUR
100+ 0.23 EUR
500+ 0.2 EUR
1000+ 0.16 EUR
2000+ 0.14 EUR
Mindestbestellmenge: 28
DMN32D0LFB4-7B Hersteller : Diodes Zetex DMN32D0LFB4.pdf N-Channel Enhancement Mode MOSFET
auf Bestellung 200000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
10000+0.092 EUR
Mindestbestellmenge: 10000