auf Bestellung 3000 Stücke:
Lieferzeit 206-210 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 0.78 EUR |
| 10+ | 0.64 EUR |
| 100+ | 0.44 EUR |
| 1000+ | 0.25 EUR |
| 3000+ | 0.22 EUR |
| 9000+ | 0.2 EUR |
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Technische Details DMN3270UVT-7 Diodes Incorporated
Description: MOSFET 2N-CH 30V 1.6A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 760mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 161pF @ 15V, Rds On (Max) @ Id, Vgs: 270mOhm @ 650mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 3.07nC @ 4.5V, Vgs(th) (Max) @ Id: 900mV @ 40µA, Supplier Device Package: TSOT-26, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMN3270UVT-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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DMN3270UVT-7 | Hersteller : Diodes Zetex |
 Trans MOSFET N-CH 30V 1.6A 6-Pin TSOT-26 T/R |
Produkt ist nicht verfügbar |
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DMN3270UVT-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 30V 1.6A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 760mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 161pF @ 15V Rds On (Max) @ Id, Vgs: 270mOhm @ 650mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.07nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 40µA Supplier Device Package: TSOT-26 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |