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DMN31D5UDW-13

DMN31D5UDW-13 Diodes Incorporated


DMN31D5UDW.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT363 T&R
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 330mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 15.4pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-363
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Technische Details DMN31D5UDW-13 Diodes Incorporated

Description: MOSFET BVDSS: 25V~30V SOT363 T&R, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 330mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 430mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 15.4pF @ 15V, Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V, Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: SOT-363.

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DMN31D5UDW-13 Hersteller : Diodes Incorporated DMN31D5UDW-3240672.pdf MOSFET MOSFET BVDSS: 25V-30V SOT363 T&R 10K
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